Department of Electrical and Electronics Engineering2024-11-0920040031-894910.1088/0031-8949/2004/T114/0462-s2.0-39549106472http://dx.doi.org/10.1088/0031-8949/2004/T114/046https://hdl.handle.net/20.500.14288/9403This paper presents experimental results on MEMS metallic add-on post-fabrication effects on complementary metal oxide semiconductor (CMOS) transistors. Two versions of add-on processing, that use either e-beam evaporation or magnetron sputtering, are compared through investigation of the electrical parameters of n-channel and p-channel transistors. The magnetron sputtering technique is shown to be compatible with standard CMOS electronics without any restriction of the metal types and annealing requirements.PhysicsJournal Article204272000047Q29246