Department of Electrical and Electronics Engineering2024-11-1020130278-007010.1109/TCAD.2012.22128972-s2.0-84871746370http://dx.doi.org/10.1109/TCAD.2012.2212897https://hdl.handle.net/20.500.14288/15862With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects. In this paper, we present two computer-aided design (CAD) tools, SAMURAI and MUSTARD, for accurately estimating the impact of non-stationary RTN on SRAMs and DRAMs. While traditional (stationary) analysis is often overly pessimistic (e. g., it overestimates RTN-induced SRAM failure rates), the predictions made by SAMURAI and MUSTARD are more reliable by virtue of non-stationary analysis.Computer science, hardware and architectureComputer science, interdisciplinary applicationsEngineering, electrical and electronicJournal Article1937-4151314676500007Q211847