Department of Chemistry2024-11-0920160003-695110.1063/1.49493382-s2.0-84971282427https://hdl.handle.net/20.500.14288/3787Undoped and aluminum (Al) doped magnesium diboride (MgB2) samples were synthesized using a high-temperature solid-state synthesis method. The microscopic defect structures of Al-doped MgB2 samples were systematically investigated using X-ray powder diffraction, Raman spectroscopy, and electron paramagnetic resonance. It was found that Mg-vacancies are responsible for defect-induced peculiarities in MgB2. Above a certain level of Al doping, enhanced conductive properties of MgB2 disappear due to filling of vacancies or trapping of Al in Mg-related vacancy sites. Published by AIP Publishing.pdfApplied physicsJournal Article1077-3118https://doi.org/10.1063/1.4949338377024000032Q2NOIR00465