Department of Mechanical Engineering2024-11-0920151546-195510.1166/jctn.2015.43742-s2.0-84964944571http://dx.doi.org/10.1166/jctn.2015.4374https://hdl.handle.net/20.500.14288/6802Resonance frequencies and quality factors of micro/nano electromechanical resonators are known to differ significantly from target values in the presence of intrinsic stresses. This stress effect is modeled for a two-port system with electrostatic actuation and capacitive read-out. A methodology is proposed to compute equivalent electrical parameters for a double-clamped beam resonator under stress. The model is verified with finite element analysis, and a number of case studies are conducted in addition. Increase in resonance frequency with increasing intrinsic tensile stress is observed under mechanical and electrical effects, while a deterioration of quality factor is evident in cases with pronounced parasitic effects. Related challenges associated with the transition to the nanoscale are computationally captured. Finally, a short formulation is provided with relevant error margins for the direct estimation of equivalent circuit parameters. The proposed approach serves as a useful tool for layout design, where all involved dimensions are considered in addition to operational variables such as bias voltage and unloaded quality factor.Mechanical engineeringA numerical simulation for the stress effect in flexural micro/nano electromechanical resonatorsJournal Articlehttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84964944571anddoi=10.1166%2fjctn.2015.4374andpartnerID=40andmd5=5597437514ef3cfeedf998b490fc5f4dQ29676