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Department: search.filters.department.Department of Mechanical EngineeringSubject: search.filters.subject.Nanoelectronics

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    High-throughput vibrational testing of silicon nanowires
    (Institute of Electrical and Electronics Engineers Inc., 2024) Department of Mechanical Engineering; Zarepakzad, Sina; Ali, Basit; Muzammil, Muhammad; Alaca, Burhanettin Erdem; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); n2STAR-Koç University Nanofabrication and Nanocharacterization Center for Scientifc and Technological Advanced Research; Graduate School of Sciences and Engineering; College of Engineering
    Silicon nanowires have emerged as essential components in nanoelectromechanical systems and nanoelectronics.Despite the associated challenges, investigation of their mechanical properties holds great significance due to their enormous potential in next-generation devices.Such challenges persist in the preparation and handling of samples, significantly impairing both throughput and reliability in experimentation.This paper introduces a comprehensive methodology integrating high-throughput resonance testing with co-fabrication techniques to enable simultaneous testing of multiple silicon nanowires under unique initial conditions.The proposed methodology aims to streamline testing processes while ensuring precise calibration and characterization of silicon nanowires.The study presents resonance testing conducted on multiple co-fabricated silicon nanowires, along with the quantification of intrinsic stresses through Raman characterization.Experimental results are compared with finite element modeling to analyze the vibration modes of the silicon nanowires under investigation.The developed methodology provides a foundational framework for scalable and reliable characterization of silicon nanowires, facilitating advancements in small-scale testing.In this context, this study paves the way into parallelization of incorporating intrinsic stresses into advanced nanomechanical modeling and highlights the importance of exploring multiscale theoretical frameworks for silicon nanowire mechanical characterization. © 2024 IEEE.