Researcher:
Yıldız, İzzet

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İzzet

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Yıldız

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Yıldız, İzzet

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2009 - 200912010 - 20111

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    Monolithic integration of silicon nanowires with a microgripper
    (Institute of Electrical and Electronics Engineers (IEEE), 2009) Ozsun, Ozgur; Leblebici, Yusuf; Yalcinkaya, Arda D.; Zervas, Michalis; Department of Mechanical Engineering; N/A; N/A; Alaca, Burhanettin Erdem; Yıldız, İzzet; Yılmaz, Mehmet; Faculty Member; Master Student; Master Student; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştirmalari Merkezi (KUYTAM); College of Engineering; Graduate School of Sciences and Engineering; Graduate School of Sciences and Engineering; 115108; N/A; N/A
    Si nanowire (NW) stacks are fabricated by utilizing the scalloping effect of inductively coupled plasma deep reactive ion etching. When two etch windows are brought close enough, scallops from both sides will ideally meet along the dividing center-line of the windows turning the separating material column into an array of vertically stacked strings. Upon further thinning of these NW precursors by oxidation followed by oxide etching, Si NWs with diameters ranging from 50 nm to above 100 nm are obtained. The pattern of NWs is determined solely by photolithography. Various geometries ranging from T-junctions to circular coils are demonstrated in addition to straight NWs along specific crystallographic orientations. The number of NWs in a stack is determined by the number of etch cycles utilized. Due to the precise lithographic definition of NW location and orientation, the technique provides a convenient batch-compatible tool for the integration of NWs with MEMS. This aspect is demonstrated with a microgripper, where an electrostatic actuation mechanism is simultaneously fabricated with the accompanying NW end-effectors. Mechanical integrity of the NW-MEMS bond and the manipulation capability of the gripper are demonstrated. Overall, the proposed technique exhibits a batch-compatible approach to the issue of micronanointegration.
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    Monolithic integration of Si nanowires with metallic electrodes: NEMS resonator and switch applications
    (Iop Publishing Ltd, 2011) Sacchetto, Davide; Leblebici, Yusuf; N/A; Department of Mechanical Engineering; N/A; Yıldız, İzzet; Alaca, Burhanettin Erdem; Arkan, Evren Fatih; Researcher; Faculty Member; Researcher; Department of Mechanical Engineering; Graduate School of Sciences and Engineering; College of Engineering; Graduate School of Sciences and Engineering; N/A; 115108; N/A
    The challenge of wafer-scale integration of silicon nanowires into microsystems is addressed by developing a fabrication approach that utilizes a combination of Bosch-process-based nanowire fabrication with surface micromachining and chemical-mechanical-polishing-based metal electrode/contact formation. Nanowires up to a length of 50 mu m are achieved while retaining submicron nanowire-to-electrode gaps. The scalability of the technique is demonstrated through using no patterning method other than optical lithography on conventional SOI substrates. Structural integrity of double-clamped nanowires is evaluated through a three-point bending test, where good clamping quality and fracture strengths approaching the theoretical strength of the material are observed. Resulting devices are characterized in resonator and switch applications-two areas of interest for CMOS-compatible solutions-with all-electrical actuation and readout schemes. Improvements and tuning of obtained performance parameters such as resonance frequency, quality factor and pull-in voltage are simply a question of conventional design and process adjustments. Implications of the proposed technique are far-reaching including system-level integration of either single-nanowire devices within thick Si layers or nanowire arrays perpendicular to the plane of the substrate.