Publication:
Origins of ultralow thermal conductivity in 1-2-1-4 quaternary selenides

dc.contributor.coauthorKuo, Jimmy Jiahong
dc.contributor.coauthorPohls, Jan-Hendrik
dc.contributor.coauthorZhou, Fei
dc.contributor.coauthorYu, Guodong
dc.contributor.coauthorFaghaninia, Alireza
dc.contributor.coauthorRicci, Francesco
dc.contributor.coauthorWhite, Mary Anne
dc.contributor.coauthorRignanese, Gian-Marco
dc.contributor.coauthorHautier, Geoffroy
dc.contributor.coauthorJain, Anubhav
dc.contributor.coauthorSnyder, G. Jeffrey
dc.contributor.departmentDepartment of Chemistry
dc.contributor.departmentDepartment of Chemistry
dc.contributor.kuauthorAydemir, Umut
dc.contributor.kuprofileFaculty Member
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.contributor.yokid58403
dc.date.accessioned2024-11-09T22:51:20Z
dc.date.issued2019
dc.description.abstractEngineering the thermal properties in solids is important for both fundamental physics (e.g. electric and phonon transport) and device applications (e.g. thermal insulating coating, thermoelectrics). In this paper, we report low thermal transport properties of four selenide compounds (BaAg2SnSe4, BaCu2GeSe4, BaCu2SnSe4 and SrCu2GeSe4) with experimentally-measured thermal conductivity as low as 0.31 +/- 0.03 W m(-1) K-1 at 673 K for BaAg2SnSe4. Density functional theory calculations predict k < 0.3 W m(-1) K-1 for BaAg2SnSe4 due to scattering from weakly-bonded Ag-Ag dimers. Defect calculations suggest that achieving high hole doping levels in these materials could be challenging due to monovalent (e.g., Ag) interstitials acting as hole killers, resulting in overall low electrical conductivity in these compounds.
dc.description.indexedbyWoS
dc.description.indexedbyScopus
dc.description.issue6
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuN/A
dc.description.sponsorshipNSF DMREF [1334713, 1334351, 1333335]
dc.description.sponsorshipU.S. Department of Energy, Office of Basic Energy Sciences, Early Career Research Program (ECRP)
dc.description.sponsorshipLaboratory Directed Research and Development program at Lawrence Livermore National Laboratory
dc.description.sponsorshipU.S. Department of Energy by LLNL [DE-AC52-07NA27344]
dc.description.sponsorshipOffice of Science of the U.S. Department of Energy [DE-AC02-05CH11231]
dc.description.sponsorshipDalhousie Research in Energy, Advanced Materials and Sustainability (DREAMS)
dc.description.sponsorshipNSERC CREATE program
dc.description.sponsorshipNova Scotia scholarship
dc.description.sponsorshipNSERC
dc.description.sponsorshipClean Technologies Research Institute at Dalhousie University JK acknowledges NSF DMREF (grant no. 1334713, 1334351, and 1333335) for support of this research. AJ and AF were funded by the U.S. Department of Energy, Office of Basic Energy Sciences, Early Career Research Program (ECRP). FZ was supported by the Laboratory Directed Research and Development program at Lawrence Livermore National Laboratory and performed under the auspices of the U.S. Department of Energy by LLNL under Contract DE-AC52-07NA27344. This research used resources of the National Energy Research Scientific Computing Center (NERSC), a DOE Office of Science User Facility supported by the Office of Science of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. JHP acknowledges support from Dalhousie Research in Energy, Advanced Materials and Sustainability (DREAMS), an NSERC CREATE program, and a Nova Scotia scholarship. MAW acknowledges support from NSERC and the Clean Technologies Research Institute at Dalhousie University.
dc.description.volume7
dc.identifier.doi10.1039/c8ta09660k
dc.identifier.eissn2050-7496
dc.identifier.issn2050-7488
dc.identifier.quartileQ1
dc.identifier.scopus2-s2.0-85061159643
dc.identifier.urihttp://dx.doi.org/10.1039/c8ta09660k
dc.identifier.urihttps://hdl.handle.net/20.500.14288/6834
dc.identifier.wos457893400017
dc.keywordsTotal-energy calculations
dc.keywordsThermoelectric properties
dc.keywordsSemiconductors
dc.languageEnglish
dc.publisherRoyal Society of Chemistry (RSC)
dc.sourceJournal of Materials Chemistry A
dc.subjectChemistry, physical
dc.subjectEnergy and fuels
dc.subjectMaterials science, multidisciplinary
dc.titleOrigins of ultralow thermal conductivity in 1-2-1-4 quaternary selenides
dc.typeJournal Article
dspace.entity.typePublication
local.contributor.authorid0000-0003-1164-1973
local.contributor.kuauthorAydemir, Umut
relation.isOrgUnitOfPublication035d8150-86c9-4107-af16-a6f0a4d538eb
relation.isOrgUnitOfPublication.latestForDiscovery035d8150-86c9-4107-af16-a6f0a4d538eb

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