Publication:
Photoelectrochemical properties of electrochemically deposited metal chalcogenide/ZnO films

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dc.contributor.departmentDepartment of Chemistry
dc.contributor.departmentGraduate School of Sciences and Engineering
dc.contributor.kuauthorAkkaya, Ceren Yılmaz
dc.contributor.kuauthorÜnal, Uğur
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.contributor.schoolcollegeinstituteGRADUATE SCHOOL OF SCIENCES AND ENGINEERING
dc.date.accessioned2024-11-09T23:57:31Z
dc.date.issued2015
dc.description.abstractIn this work we studied metal chalcogenide sensitization of ZnO by electrochemical deposition which provides a fine electric contact between metal sulfide and the oxide. Deposition conditions to prepare the CdS/ZnO and Ag2S/ZnO films with optimized photoelectrochemical (PEC) properties are investigated. Effect of deposition technique, time, Mn-doping and post-annealing on photoresponse of the fabricated films are discussed. A short circuit current density of 1.42 mA/cm(2) and an open circuit potential of -1.39 V (overall power conversion efficiency of 0.81%) have been achieved for the annealed Mn-doped CdS/ZnO electrode which is prepared by potensiostatic deposition. Potensiostatic deposition yields Ag2S in Acanthite form which is accompanied by ZnO degradation and the photoelectrode exhibits considerably enhanced and widened light absorption but lower overall power-conversion efficiency.
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.openaccessNO
dc.description.sponsoredbyTubitakEuN/A
dc.description.sponsorshipKoc University Faculty of Science
dc.description.sponsorshipTurkish Ministry of Development Authors thank to Koc University Faculty of Science for financial support. We also thank to Turkish Ministry of Development for the financial support provided for the establishment of Koc University Surface Science and Technology Center (KUYTAM).
dc.description.volume350
dc.identifier.doi10.1016/j.apsusc.2015.03.134
dc.identifier.eissn1873-5584
dc.identifier.issn0169-4332
dc.identifier.scopus2-s2.0-84938738374
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2015.03.134
dc.identifier.urihttps://hdl.handle.net/20.500.14288/15307
dc.identifier.wos359166600017
dc.keywordsElectrochemical deposition
dc.keywordsPhotoelectrochemistry
dc.keywordsMetal chalcogenide
dc.keywordsSensitized solar-cells
dc.keywordsCdS thin-films
dc.keywordsCadmium-sulfide films
dc.keywordsQuantum dots
dc.keywordsPhotovoltaic performance
dc.keywordsAg2S
dc.keywordsEfficiency
dc.keywordsRaman
dc.keywordsSize
dc.language.isoeng
dc.publisherElsevier Science Bv
dc.relation.ispartofApplied Surface Science
dc.subjectChemistry, physical and theoretical
dc.subjectMaterials sciences
dc.subjectCoatings
dc.subjectPhysics
dc.subjectCondensed matter
dc.titlePhotoelectrochemical properties of electrochemically deposited metal chalcogenide/ZnO films
dc.typeConference Proceeding
dspace.entity.typePublication
local.contributor.kuauthorAkkaya, Ceren Yılmaz
local.contributor.kuauthorÜnal, Uğur
local.publication.orgunit1GRADUATE SCHOOL OF SCIENCES AND ENGINEERING
local.publication.orgunit1College of Sciences
local.publication.orgunit2Department of Chemistry
local.publication.orgunit2Graduate School of Sciences and Engineering
relation.isOrgUnitOfPublication035d8150-86c9-4107-af16-a6f0a4d538eb
relation.isOrgUnitOfPublication3fc31c89-e803-4eb1-af6b-6258bc42c3d8
relation.isOrgUnitOfPublication.latestForDiscovery035d8150-86c9-4107-af16-a6f0a4d538eb
relation.isParentOrgUnitOfPublicationaf0395b0-7219-4165-a909-7016fa30932d
relation.isParentOrgUnitOfPublication434c9663-2b11-4e66-9399-c863e2ebae43
relation.isParentOrgUnitOfPublication.latestForDiscoveryaf0395b0-7219-4165-a909-7016fa30932d

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