Publication:
Field-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions

dc.contributor.coauthorRangelow, Ivo W.
dc.contributor.coauthorLenk, Claudia
dc.contributor.coauthorHofmann, Martin
dc.contributor.coauthorLenk, Steve
dc.contributor.coauthorIvanov, Tzvetan
dc.contributor.coauthorAhmad, Ahmad
dc.contributor.coauthorKaestner, Marcus
dc.contributor.coauthorGuliyev, Elshad
dc.contributor.coauthorReuter, Christoph
dc.contributor.coauthorBudden, Matthias
dc.contributor.coauthorZoellner, Jens-Peter
dc.contributor.coauthorHolz, Mathias
dc.contributor.coauthorReum, Alexander
dc.contributor.coauthorDurrani, Zahid
dc.contributor.coauthorJones, Mervyn
dc.contributor.coauthorAydoğan, Cemal
dc.contributor.coauthorKuehnel, Michael
dc.contributor.coauthorFrohlich, Thomas
dc.contributor.coauthorFuessl, Roland
dc.contributor.coauthorManske, E.
dc.contributor.departmentDepartment of Mechanical Engineering
dc.contributor.departmentGraduate School of Sciences and Engineering
dc.contributor.kuauthorAlaca, Burhanettin Erdem
dc.contributor.kuauthorBiçer, Mahmut
dc.contributor.schoolcollegeinstituteCollege of Engineering
dc.contributor.schoolcollegeinstituteGRADUATE SCHOOL OF SCIENCES AND ENGINEERING
dc.date.accessioned2024-11-09T12:11:30Z
dc.date.issued2018
dc.description.abstractCost-effective generation of single-digit nano-lithographic features could be the way by which novel nanoelectronic devices, as single electron transistors combined with sophisticated CMOS integrated circuits, can be obtained. The capabilities of Field-Emission Scanning Probe Lithography (FE-SPL) and reactive ion etching (RIE) at cryogenic temperature open up a route to overcome the fundamental size limitations in nanofabrication. FE-SPL employs Fowler-Nordheim electron emission from the tip of a scanning probe in ambient conditions. The energy of the emitted electrons (<100 eV) is close to the lithographically relevant chemical excitations of the resist, thus strongly reducing proximity effects. The use of active, i.e. self-sensing and self-actuated, cantilevers as probes for FE-SPL leads to several promising performance benefits. These include: (1) Closed-loop lithography including pre-imaging, overlay alignment, exposure, and post-imaging for feature inspection; (2) Sub-5-nm lithographic resolution with sub-nm line edge roughness; (3) High overlay alignment accuracy; (4) Relatively low costs of ownership, since no vacuum is needed, and ease-of-use. Thus, FE-SPL is a promising tool for rapid nanoscale prototyping and fabrication of high resolution nanoimprint lithography templates. To demonstrate its capabilities we applied FE-SPL and RIE to fabricate single electron transistors (SET) targeted to operate at room temperature. Electrical characterization of these SET confirmed that the smallest functional structures had a diameter of only 1.8 nanometers. Devices at single digit nano-dimensions contain only a few dopant atoms and thus, these might be used to store and process quantum information by employing the states of individual atoms.
dc.description.fulltextYES
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuEU
dc.description.sponsorshipEuropean Union (European Union)
dc.description.sponsorshipHorizon 2020
dc.description.sponsorshipEuropean Research Council (ERC) European Union's Seventh Framework Program
dc.description.sponsorshipFP7/2007-2013
dc.description.versionPublisher version
dc.identifier.doi10.1117/12.2299955
dc.identifier.eissn1996-756X
dc.identifier.embargoNO
dc.identifier.filenameinventorynoIR01289
dc.identifier.isbn978-1-5106-1661-5
dc.identifier.issn0277-786X
dc.identifier.quartileN/A
dc.identifier.scopus2-s2.0-85050209466
dc.identifier.urihttps://doi.org/10.1117/12.2299955
dc.identifier.wos454731800003
dc.keywordsScanning probe lithography
dc.keywordsSPL
dc.keywordsNanofabrication
dc.keywordsCalixarene
dc.keywordsMolecular glass resist
dc.keywordsClosed loop lithography
dc.keywordsNanoprobe maskless lithography
dc.keywordsSelf-developing resist
dc.language.isoeng
dc.publisherSociety of Photo-optical Instrumentation Engineers (SPIE)
dc.relation.grantno318804
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.relation.urihttp://cdm21054.contentdm.oclc.org/cdm/ref/collection/IR/id/8146
dc.subjectOptics
dc.titleField-emission scanning probe lithography with self-actuating and self-sensing cantilevers for devices with single digit nanometer dimensions
dc.typeConference Proceeding
dspace.entity.typePublication
local.contributor.kuauthorAlaca, Burhanettin Erdem
local.contributor.kuauthorBiçer, Mahmut
local.publication.orgunit1GRADUATE SCHOOL OF SCIENCES AND ENGINEERING
local.publication.orgunit1College of Engineering
local.publication.orgunit2Department of Mechanical Engineering
local.publication.orgunit2Graduate School of Sciences and Engineering
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