Defect dependent electronic properties of two-dimensional transition metal dichalcogenides (2H, 1T, and 1T′ phases)

Abstract

Transition metal dichalcogenides (TMDs) exhibit a wide range of electronic properties due to their structural diversity. Understanding their defect-dependent properties might enable the design of efficient, bright, and long-lifetime quantum emitters. Here, we use density functional theory (DFT) calculations to investigate the 2H, 1T, and 1T ' phases of MoS2, WS2, MoSe2, WSe2 and the effect of defect densities on the electronic band structures, focusing on the influence of chalcogen vacancies. The 2H phase, which is thermodynamically stable, is a direct band gap semiconductor, while the 1T phase, despite its higher formation energy, exhibits metallic behavior. 1T phases with spin-orbit coupling show significant band inversions of 0.61, 0.77, 0.24 and 0.78 eV for MoS2, MoSe2, WS2 and WSe2, respectively. We discovered that for all four MX2 systems, the energy difference between 2H, 1T and 1T phases decreases with increasing concentration of vacancies (from 3.13% to 21.88%). Our findings show that the 2H phase also has minimum energy values depending on vacancies. TMDs containing W were found to have a wider bandgap compared to those containing Mo. The band gap of 2H WS2 decreased from 1.81 eV (1.54 eV with SOC included) under GGA calculations to a range of 1.37 eV to 0.79 eV, while the band gap of 2H MoSe2 reduced from 1.43 eV (1.31 eV with SOC) under GGA to a range of 0.98 eV to 0.06 eV, depending on the concentration. Our findings provide guidelines for experimental screening of 2D TMD defects, paving the way for the development of next-generation spintronic, electronic, and optoelectronic devices.