Analysis of low-frequency noise in switched MOSFET circuits: revisited and clarified

Abstract

Traps that are located in the gate oxide of MOSFETs have been established as a cause of low-frequency noise phenomena. analysis of such noise is usually based on frequency domain, stationary models. It has been shown that such simplistic models produce erroneous results for circuits with time-varying bias conditions. Tian et al. proposed an idealized trap model with the goal of capturing the nonstationary behavior of oxide traps, and were able to elucidate the experimentally observed large noise power reduction in switched MOSFET circuits which eluded any explanation obtainable with legacy stationary models. in this paper, we build on their seminal work and first identify an oversight in their model derivation which had produced an incorrect expression for the single trap noise spectrum. We next derive the correct spectrum expression, verify it against detailed idealized trap simulations and discuss its implications. the idealized trap model is amenable to analytical derivations and useful as a first stage in understanding nonstationary trap noise. We then demonstrate that noise simulations based on a detailed trap description implemented in a compact MOSFET model in a circuit simulator are needed for an accurate characterization of low-frequency noise in switched MOSFET circuits that matches experimental results.