Thin film rare earth iron garnets with perpendicular magnetic anisotropy for spintronic applications

Abstract

Perpendicular magnetic anisotropy (PMA) in garnet thin films is important for achieving numerous spintronic applications including spin-orbit switching. In this study, we computationally investigated how to control PMA by tuning substrate strain in Holmium Iron Garnet (HoIG) films grown on five different (111) single crystal garnet substrates of Gadolinium Gallium Garnet (GGG, Gd3Ga5O12), Yttrium Aluminum Garnet (YAG, Y3Al5O12), Terbium Gallium Garnet (TGG, Tb3Ga5O12), Substituted Gadolinium Gallium Garnet (sGGG, Gd3Sc2Ga3O12), and Neodymium Gallium Garnet (NGG, Nd3Ga5O12). The negative sign of effective anisotropy energy density, K-eff < 0, and anisotropy field, H-a < 0, determines the easy magnetization axis of the film to be perpendicular to the film surface. Here, we show that magnetoelastic anisotropy energy density determines the sign of the total anisotropy and it can be manipulated by altering the lattice parameter mismatch of the film and its substrate. Based on this study, HoIG is predicted to have PMA when grown on GGG, TGG and YAG among all five substrates mentioned. Moreover, the saturation field magnitude is calculated as an order of several hundreds of Oersteds, which is feasible in practical applications to saturate rare earth iron garnets with perpendicular magnetic anisotropy.