Publication:
Influence of doping concentration on the power performance of diode-pumped continuous-wave Tm 3+:YAlO 3 lasers

dc.contributor.coauthorN/A
dc.contributor.departmentDepartment of Physics
dc.contributor.departmentGraduate School of Sciences and Engineering
dc.contributor.kuauthorKalaycıoğlu, Hamit
dc.contributor.kuauthorKurt, Adnan
dc.contributor.kuauthorSennaroğlu, Alphan
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.contributor.schoolcollegeinstituteGRADUATE SCHOOL OF SCIENCES AND ENGINEERING
dc.date.accessioned2024-11-09T23:44:55Z
dc.date.issued2005
dc.description.abstractWe investigated the effect of thulium ion concentration on the continuous-wave (CW) power performance of diode single-end-pumped thulium-doped YAlO3 (Tm:YAP) lasers. Three samples with 1.5%, 3%, and 4% Tm3+ concentration were examined at 18 ◦C. Lifetime and fluorescence measurements were further performed to assess the strength of cross relaxation and nonradiative decay. Our results showed that in single-end-pumped configurations, the best CW power performance was obtained with the 1.5% Tm:YAP sample, and laser performance of the samples degraded monotonically with increasing Tm3+ concentration. By using 9.5 W of incident pump power at 797 nm, a maximum of 1430 mW of output power was obtained with the 1.5% Tm:YAP sample and 2% output coupler. We discuss how the effects of cross relaxation, reabsorption, nonradiative decay, and internal heating vary with increasing concentration. Spectroscopic measurements and rate-equation analysis suggest that cross relaxation should already be effective in samples with 1.5% Tm3+ ion concentration and doping concentrations larger than 4% will lead to degradation in power performance due to higher nonradiative decay rates and larger reabsorption losses.
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.issue3
dc.description.openaccessNO
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuN/A
dc.description.volume11
dc.identifier.doi10.1109/JSTQE.2005.850597
dc.identifier.eissn1558-4542
dc.identifier.issn1077-260X
dc.identifier.scopus2-s2.0-27344460136
dc.identifier.urihttps://doi.org/10.1109/JSTQE.2005.850597
dc.identifier.urihttps://hdl.handle.net/20.500.14288/13749
dc.identifier.wos232682800014
dc.keywordsCross relaxation
dc.keywordsDiode-pumped solid-state lasers
dc.keywordsMid-infrared lasers
dc.keywordsSpectroscopic measurements
dc.keywordsTm : YAP lasers
dc.language.isoeng
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofIEEE Journal of Selected Topics in Quantum Electronics
dc.subjectEngineering
dc.subjectElectrical and electronic engineering
dc.subjectQuantum science and technology
dc.subjectOptics
dc.subjectPhysics
dc.subjectApplied physics
dc.titleInfluence of doping concentration on the power performance of diode-pumped continuous-wave Tm 3+:YAlO 3 lasers
dc.typeJournal Article
dspace.entity.typePublication
local.contributor.kuauthorKalaycıoğlu, Hamit
local.contributor.kuauthorSennaroğlu, Alphan
local.contributor.kuauthorKurt, Adnan
local.publication.orgunit1GRADUATE SCHOOL OF SCIENCES AND ENGINEERING
local.publication.orgunit1College of Sciences
local.publication.orgunit2Department of Physics
local.publication.orgunit2Graduate School of Sciences and Engineering
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