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Luminescence of black silicon

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dc.contributor.coauthorInanc, Ibrahim
dc.contributor.coauthorCary, James E.
dc.contributor.coauthorMazur, Eric
dc.contributor.departmentDepartment of Physics
dc.contributor.kuauthorKurt, Adnan
dc.contributor.kuauthorSerpengüzel, Ali
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.date.accessioned2024-11-09T11:38:01Z
dc.date.issued2008
dc.description.abstractRoom temperature visible and near-infrared photoluminescence from black silicon has been observed. The black silicon is manufactured by shining femtosecond laser pulses on silicon wafers in air, which were later annealed in vacuum. The photoluminescence is quenched above 120 K due to thermalization and competing nonradiative recombination of the carriers. The photoluminescence intensity at 10K depends sublinearly on the excitation laser intensity confirming band tail recombination at the defect sites.
dc.description.fulltextYES
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.issue1
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuEU
dc.description.sponsorshipKoç University Harvard University Joint Research Program
dc.description.sponsorshipEuropean Commission
dc.description.sponsorshipNetwork of Excellence NanoPHOtonics to REalization of MOlecular Scale Technologies (PHOREMOST)
dc.description.sponsorshipNetwork of Excellence on Micro Optics (NEMO)
dc.description.versionPublisher version
dc.description.volume2
dc.identifier.doi10.1117/1.2896069
dc.identifier.embargoNO
dc.identifier.filenameinventorynoIR00503
dc.identifier.issn1934-2608
dc.identifier.quartileN/A
dc.identifier.scopus2-s2.0-63049125641
dc.identifier.urihttps://doi.org/10.1117/1.2896069
dc.identifier.wos262931600009
dc.keywordsBand tail recombination
dc.keywordsBlack silicon
dc.keywordsLaser spectroscopy
dc.keywordsLuminescence
dc.keywordsOptical communication
dc.keywordsPhotoluminescence
dc.keywordsQuenching
dc.keywordsRecombination
dc.keywordsSilicon photonics
dc.language.isoeng
dc.publisherSociety of Photo-optical Instrumentation Engineers (SPIE)
dc.relation.grantnoFP6-IST511616
dc.relation.grantnoFP6-IST 003887
dc.relation.ispartofJournal of Nanophotonics
dc.relation.urihttp://cdm21054.contentdm.oclc.org/cdm/ref/collection/IR/id/576
dc.subjectNanoscience and nanotechnology
dc.subjectOptics
dc.titleLuminescence of black silicon
dc.typeJournal Article
dspace.entity.typePublication
local.contributor.kuauthorSerpengüzel, Ali
local.contributor.kuauthorKurt, Adnan
local.publication.orgunit1College of Sciences
local.publication.orgunit2Department of Physics
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relation.isOrgUnitOfPublication.latestForDiscoveryc43d21f0-ae67-4f18-a338-bcaedd4b72a4
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