Publication: Quantum dot and electron acceptor nano-heterojunction for photo-induced capacitive charge-transfer
dc.contributor.coauthor | Ow-Yang, Cleva W. | |
dc.contributor.coauthor | Şahin, Mehmet | |
dc.contributor.department | Department of Electrical and Electronics Engineering | |
dc.contributor.department | Graduate School of Sciences and Engineering | |
dc.contributor.kuauthor | Eren, Güncem Özgün | |
dc.contributor.kuauthor | Karatüm, Onuralp | |
dc.contributor.kuauthor | Melikov, Rustamzhon | |
dc.contributor.kuauthor | Nizamoğlu, Sedat | |
dc.contributor.kuauthor | Önal, Asım | |
dc.contributor.schoolcollegeinstitute | College of Engineering | |
dc.contributor.schoolcollegeinstitute | GRADUATE SCHOOL OF SCIENCES AND ENGINEERING | |
dc.date.accessioned | 2024-11-09T12:11:34Z | |
dc.date.issued | 2021 | |
dc.description.abstract | Capacitive charge transfer at the electrode/electrolyte interface is a biocompatible mechanism for the stimulation of neurons. Although quantum dots showed their potential for photostimulation device architectures, dominant photoelectrochemical charge transfer combined with heavy-metal content in such architectures hinders their safe use. In this study, we demonstrate heavy-metal-free quantum dot-based nano-heterojunction devices that generate capacitive photoresponse. For that, we formed a novel form of nano-heterojunctions using type-II InP/ZnO/ZnS core/shell/shell quantum dot as the donor and a fullerene derivative of PCBM as the electron acceptor. The reduced electron-hole wavefunction overlap of 0.52 due to type-II band alignment of the quantum dot and the passivation of the trap states indicated by the high photoluminescence quantum yield of 70% led to the domination of photoinduced capacitive charge transfer at an optimum donor-acceptor ratio. This study paves the way toward safe and efficient nanoengineered quantum dot-based next-generation photostimulation devices. | |
dc.description.fulltext | YES | |
dc.description.indexedby | WOS | |
dc.description.indexedby | Scopus | |
dc.description.indexedby | PubMed | |
dc.description.openaccess | YES | |
dc.description.publisherscope | International | |
dc.description.sponsoredbyTubitakEu | EU | |
dc.description.sponsorship | European Union (EU) | |
dc.description.sponsorship | Horizon 2020 | |
dc.description.sponsorship | European Research Council (ERC) | |
dc.description.version | Publisher version | |
dc.description.volume | 11 | |
dc.identifier.doi | 10.1038/s41598-021-82081-y | |
dc.identifier.embargo | NO | |
dc.identifier.filenameinventoryno | IR02682 | |
dc.identifier.issn | 2045-2322 | |
dc.identifier.quartile | Q2 | |
dc.identifier.scopus | 2-s2.0-85100037112 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14288/1075 | |
dc.identifier.wos | 616817000059 | |
dc.keywords | Materials for devices | |
dc.keywords | Quantum dots | |
dc.language.iso | eng | |
dc.publisher | Nature Publishing Group (NPG) | |
dc.relation.grantno | 639846 | |
dc.relation.ispartof | Scientific Reports | |
dc.relation.uri | http://cdm21054.contentdm.oclc.org/cdm/ref/collection/IR/id/9328 | |
dc.subject | Science and technology | |
dc.title | Quantum dot and electron acceptor nano-heterojunction for photo-induced capacitive charge-transfer | |
dc.type | Journal Article | |
dspace.entity.type | Publication | |
local.contributor.kuauthor | Karatüm, Onuralp | |
local.contributor.kuauthor | Melikov, Rustamzhon | |
local.contributor.kuauthor | Eren, Güncem Özgün | |
local.contributor.kuauthor | Önal, Asım | |
local.contributor.kuauthor | Nizamoğlu, Sedat | |
local.publication.orgunit1 | GRADUATE SCHOOL OF SCIENCES AND ENGINEERING | |
local.publication.orgunit1 | College of Engineering | |
local.publication.orgunit2 | Department of Electrical and Electronics Engineering | |
local.publication.orgunit2 | Graduate School of Sciences and Engineering | |
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relation.isOrgUnitOfPublication | 3fc31c89-e803-4eb1-af6b-6258bc42c3d8 | |
relation.isOrgUnitOfPublication.latestForDiscovery | 21598063-a7c5-420d-91ba-0cc9b2db0ea0 | |
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