Cmos-compatible optical phased array powered by a monolithically-integrated erbium laser

Abstract

An advanced CMOS-compatible 300-mm-wafer silicon-photonics platform is introduced that consists of a silicon layer with eight doping masks, two silicon-nitride layers, three metal and via layers, a dicing trench for smooth edge-coupled facets, and a gain-film trench that enables interaction between the gain material and waveguide layers. The platform was used to demonstrate an electrically-steerable integrated optical phased array powered by an on-chip erbium-doped laser. Lasing with a single-mode output, 30 dB side-mode-suppression ratio, and 40 mW lasing threshold was shown, and one-dimensional beam steering with a 0.85 degrees x 0.20 degrees full-width at half-maximum and 30 degrees/W electrical steering efficiency was demonstrated. This system represents the first demonstration of a rare-earth-doped laser monolithically-integrated with an active CMOS-compatible silicon-on-insulator photonics system.