Publication:
Electromechanical modeling of silicon nanowire switches: size and boundary condition effects

dc.contributor.coauthorEsfahani, Mohammad Nasr
dc.contributor.departmentDepartment of Mechanical Engineering
dc.contributor.departmentGraduate School of Sciences and Engineering
dc.contributor.departmentKUYTAM (Koç University Surface Science and Technology Center)
dc.contributor.facultymemberYes
dc.contributor.kuauthorAlaca, Burhanettin Erdem
dc.contributor.kuauthorRoudposhti, Speedeh Shahbeigi
dc.contributor.schoolcollegeinstituteCollege of Engineering
dc.contributor.schoolcollegeinstituteGRADUATE SCHOOL OF SCIENCES AND ENGINEERING
dc.contributor.schoolcollegeinstituteResearch Center
dc.date.accessioned2024-11-09T22:52:37Z
dc.date.issued2020
dc.description.abstractUnderstanding the operational behavior of nanoelectromechanical systems (NEMS) is the preliminary step to design functional sensors and actuators. Miniaturization is considered for further improvement in sensitivity, while the extreme surface area in NEMS devices plays a leading role in the effective performance through size dependence physical properties. Nanowire (NW) switches are one such device with significant surface effects present on the pull-in voltage. This study introduces a new approach to implement the surface effect into electromechanical behavior of NW switches based on finite element analysis. The influence of size and boundary condition on pull-in voltage is studied for silicon NWs. Results demonstrate the importance of length-to-thickness ratio as a suitable parameter to express the surface effect rather than the surface-area-to-volume ratio.
dc.description.fulltextNo
dc.description.harvestedfromManual
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.openaccessNO
dc.description.peerreviewstatusN/A
dc.description.publisherscopeInternational
dc.description.readpublishN/A
dc.description.sponsoredbyTubitakEuN/A
dc.description.studentonlypublicationNo
dc.description.studentpublicationYes
dc.description.versionN/A
dc.identifier.doi10.1063/5.0026835
dc.identifier.embargoN/A
dc.identifier.isbn978-0-7354-4025-8
dc.identifier.issn0094-243X
dc.identifier.quartileBakılacak
dc.identifier.scopus2-s2.0-85097979550
dc.identifier.urihttps://doi.org/10.1063/5.0026835
dc.identifier.urihttps://hdl.handle.net/20.500.14288/7058
dc.identifier.wos636709500280
dc.keywordsSilicon nanowire
dc.keywordsNanoelectromechanical systems
dc.keywordsMiniaturization
dc.keywordsSurface effect
dc.keywordsPull-in voltage
dc.language.isoeng
dc.publisherAmer Inst Physics
dc.relation.affiliationKoç University
dc.relation.collectionKoç University Institutional Repository
dc.relation.ispartofInternational Conference On Numerical Analysis and Applied Mathematics Icnaam 2019
dc.relation.openaccessN/A
dc.rightsN/A
dc.subjectMathematics
dc.subjectComputational biology
dc.subjectPhysics
dc.subjectMathematical statistics
dc.subjectProbabilities
dc.titleElectromechanical modeling of silicon nanowire switches: size and boundary condition effects
dc.typeConference Proceeding
dspace.entity.typePublication
local.contributor.kuauthorRoudposhti, Speedeh Shahbeigi
local.contributor.kuauthorAlaca, Burhanettin Erdem
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