Publication:
Temperature dependence of photoluminescence in non-crystalline silicon

dc.contributor.coauthorBilici, T
dc.contributor.coauthorİnanç, I
dc.contributor.coauthorCarey, J
dc.contributor.coauthorMazur, E.
dc.contributor.departmentDepartment of Physics
dc.contributor.kuauthorSerpengüzel, Ali
dc.contributor.kuauthorKurt, Adnan
dc.contributor.kuprofileFaculty Member
dc.contributor.kuprofileTeaching Faculty
dc.contributor.otherDepartment of Physics
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.contributor.yokid27855
dc.contributor.yokid194455
dc.date.accessioned2024-11-09T12:25:32Z
dc.date.issued2004
dc.description.abstractCrystalline silicon being ubiquitous throughout the microelectronics industry has an indirect bandgap, and therefore is incapable of light emission. However, strong room temperature visible and near-IR luminescence from non-crystalline silicon, e.g., amorphous silicon, porous silicon, and black silicon, has been observed. These silicon based materials are morphologically similar to each other, and have similar luminescence properties. We have studied the temperature dependence of the photoluminescence from these non-crystalline silicons to fully characterize and optimize these materials in the pursuit of obtaining novel optoelectronic devices.
dc.description.fulltextYES
dc.description.indexedbyWoS
dc.description.indexedbyScopus
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuTÜBİTAK
dc.description.sponsorshipScientific and Technological Research Council (Scientific and Technological Research Council of Turkey (TÜBİTAK))
dc.description.sponsorshipEuropean Office of Aerospace Research and Development (EOARD)
dc.description.versionPublisher version
dc.formatpdf
dc.identifier.doi10.1117/12.529549
dc.identifier.eissn1996-756X
dc.identifier.embargoNO
dc.identifier.filenameinventorynoIR00812
dc.identifier.isbn0-8194-5257-2
dc.identifier.issn0277-786X
dc.identifier.linkhttps://doi.org/10.1117/12.529549
dc.identifier.quartileN/A
dc.identifier.scopus2-s2.0-3543117236
dc.identifier.urihttps://hdl.handle.net/20.500.14288/1598
dc.identifier.wos222604400051
dc.keywordsAmorphous silicon
dc.keywordsBlack silicon
dc.keywordsNon-crystalline silicon
dc.keywordsPorous silicon
dc.keywordsPlasma enhanced chemical vapor deposition
dc.keywordsPhotoluminescence
dc.languageEnglish
dc.publisherSociety of Photo-optical Instrumentation Engineers (SPIE)
dc.relation.grantnoTBAG-1952
dc.relation.grantnoF61775-01-WE062
dc.relation.grantnoFA8655-02-M-4086
dc.relation.urihttp://cdm21054.contentdm.oclc.org/cdm/ref/collection/IR/id/806
dc.sourceProceedings of SPIE
dc.subjectOptics
dc.subjectApplied physics
dc.titleTemperature dependence of photoluminescence in non-crystalline silicon
dc.typeConference proceeding
dspace.entity.typePublication
local.contributor.authorid0000-0002-0676-8817
local.contributor.authorid0000-0001-6612-5234
local.contributor.kuauthorSerpengüzel, Ali
local.contributor.kuauthorKurt, Adnan
relation.isOrgUnitOfPublicationc43d21f0-ae67-4f18-a338-bcaedd4b72a4
relation.isOrgUnitOfPublication.latestForDiscoveryc43d21f0-ae67-4f18-a338-bcaedd4b72a4

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
806.pdf
Size:
289.5 KB
Format:
Adobe Portable Document Format