Publication:
Profound influence of surface trap states on the utilization of charge carriers in CdS photoanodes

dc.contributor.departmentKUTEM (Koç University Tüpraş Energy Center)
dc.contributor.departmentDepartment of Chemistry
dc.contributor.departmentKUYTAM (Koç University Surface Science and Technology Center)
dc.contributor.departmentGraduate School of Sciences and Engineering
dc.contributor.kuauthorKaya, Sarp
dc.contributor.kuauthorJahangiri, Hadi
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.contributor.schoolcollegeinstituteGRADUATE SCHOOL OF SCIENCES AND ENGINEERING
dc.contributor.schoolcollegeinstituteResearch Center
dc.date.accessioned2025-01-19T10:27:55Z
dc.date.issued2023
dc.description.abstractCdS is one of the most promising photoanode candidates for photoelectrochemical (PEC) water splitting because of its narrow bandgap, suitable band-edge alignment, and facile fabrication. However, it suffers from photocorrosion and instability due to surface charge recombination. Extensive PEC characterization studies showed that hole utilization at the photoanode/electrolyte interface is the bottleneck for CdS photoanodes. In this study, the fundamental charge carrier dynamics processes on CdS surfaces were investigated and a deactivation mechanism was proposed where surface sulfur vacancies (Sv) served as electron trap centers that caused surface charge recombination. Detailed photocurrent transients showed that the extent of trapping was affected by Sv content and oxygen evolution via the water oxidation reaction. To circumvent this issue, a surface decoration method was demonstrated by using hexadecyltrimethylammonium bromide (CTAB) which passivated electron trapping via occupation of the surface Svs by Br-. This work may contribute to further studies on CdS and other semiconductor photoelectrodes to enhance the understanding of charge utilization processes at photoanode-electrolyte interfaces. In CdS photoanodes, the decoration of surface sulfur vacancies by CTAB passivates the electron trapping process, resulting in improved photoelectrochemical water oxidation performance.
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.issue4
dc.description.openaccessgold
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuN/A
dc.description.volume5
dc.identifier.doi10.1039/d3ma00847a
dc.identifier.eissn2633-5409
dc.identifier.quartileQ2
dc.identifier.scopus2-s2.0-85180070199
dc.identifier.urihttps://doi.org/10.1039/d3ma00847a
dc.identifier.urihttps://hdl.handle.net/20.500.14288/25639
dc.identifier.wos1125755700001
dc.keywordsCharge carriers
dc.keywordsCharge trapping
dc.keywordsNarrow band gap semiconductors
dc.keywordsSelenium compounds
dc.keywordsSemiconducting cadmium telluride
dc.keywordsSemiconducting indium phosphide
dc.language.isoeng
dc.publisherRoyal Society of Chemistry
dc.relation.ispartofMaterials Advances
dc.subjectMaterials science, multidisciplinary
dc.titleProfound influence of surface trap states on the utilization of charge carriers in CdS photoanodes
dc.typeJournal Article
dspace.entity.typePublication
local.contributor.kuauthorAlagöz, Elif Öykü
local.contributor.kuauthorJahangiri, Hadi
local.contributor.kuauthorKaya, Sarp
local.publication.orgunit1GRADUATE SCHOOL OF SCIENCES AND ENGINEERING
local.publication.orgunit1College of Sciences
local.publication.orgunit1Research Center
local.publication.orgunit2Department of Chemistry
local.publication.orgunit2KUTEM (Koç University Tüpraş Energy Center)
local.publication.orgunit2KUYTAM (Koç University Surface Science and Technology Center)
local.publication.orgunit2Graduate School of Sciences and Engineering
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