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Publication Metadata only ‘Anti-commutable’ local pre-Leibniz algebroids and admissible connections(Elsevier, 2023) Department of Physics; N/A; Dereli, Tekin; Doğan, Keremcan; Faculty Member; PhD Student; Department of Physics; College of Sciences; Graduate School of Sciences and Engineering; 201358; N/AThe concept of algebroid is convenient as a basis for constructions of geometrical frameworks. For example, metric-affine and generalized geometries can be written on Lie and Courant algebroids, respectively. Furthermore, string theories might make use of many other algebroids such as metric algebroids, higher Courant algebroids, or conformal Courant algebroids. Working on the possibly most general algebroid structure, which generalizes many of the algebroids used in the literature, is fruitful as it creates a chance to study all of them at once. Local pre-Leibniz algebroids are such general ones in which metric-connection geometries are possible to construct. On the other hand, the existence of the 'locality operator', which is present for the left-Leibniz rule for the bracket, necessitates the modification of torsion and curvature operators in order to achieve tensorial quantities. In this paper, this modification of torsion and curvature is explained from the point of view that the modification is applied to the bracket instead. This leads one to consider 'anti-commutable' local pre-Leibniz algebroids which satisfy an anti-commutativity-like property defined with respect to a choice of an equivalence class of connections. These 'admissible' connections are claimed to be the necessary ones while working on a geometry of algebroids. This claim is due to the fact that one can prove many desirable properties and relations if one uses only admissible connections. For instance, for admissible connections, we prove the first and second Bianchi identities, Cartan structure equations, Cartan magic formula, the construction of Levi-Civita connections, the decomposition of connection in terms of torsion and non-metricity. These all are possible because the modified bracket becomes anti-symmetric for an admissible connection so that one can apply the machinery of almost-or pre-Lie algebroids. We investigate various algebroid structures from the literature and show that they admit admissible connections which are metric-compatible in some generalized sense. Moreover, we prove that local pre-Leibniz algebroids that are not anti-commutable cannot be equipped with a torsion-free, and in particular Levi-Civita, connection.Publication Metadata only 10-NJ multipass-cavity femtosecond CR3+: LiCAF laser pumped by low-power single-mode diodes(Optical Society of America, 2009) Kärtner, Franz X.; Fujimoto, James G.; Demirbaş, Ümit; Department of Physics; Sennaroğlu, Alphan; Faculty Member; Department of Physics; College of Sciences; 23851We report on the generation of 9.9-nJ, 95-fs pulses at a repetition rate of 9.58 MHz from a multipass-cavity Cr3+:LiCAF laser pumped by single-mode diodes with a total absorbed pump power of only 540 mW.Publication Metadata only 5-nj Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode(Iop Publishing Ltd, 2018) N/A; N/A; Department of Physics; Department of Physics; Muti, Abdullah; Kocabaş, Aşkın; Sennaroğlu, Alphan; PhD Student; Faculty Member; Faculty Member; Department of Physics; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); Graduate School of Sciences and Engineering; College of Sciences; College of Sciences; N/A; 227753; 23851We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.Publication Metadata only 80-NJ multipass-cavity chirped-pulse Cr4+: forsterite laser(Optical Society of America, 2010) Fujimoto, James G.; Department of Physics; Sennaroğlu, Alphan; Çankaya, Hüseyin; Faculty Member; Researcher; Department of Physics; College of Sciences; Graduate School of Sciences and Engineering; 23851; N/ABy using 8.5 W of incident pump power, we obtained 80-nJ, 5.5-ps pulses at 1260 nm with a spectral width of 17 nm from a multipass-cavity, chirped-pulse Cr4+:forsterite laser operated at 4.9-MHz repetition rate. © 2010 Optical Society of America.Publication Metadata only A communication theoretical modeling of single-layer graphene photodetectors and efficient multireceiver diversity combining(Ieee-Inst Electrical Electronics Engineers Inc, 2012) N/A; Department of Electrical and Electronics Engineering; Gülbahar, Burhan; Akan, Özgür Barış; PhD Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; College of Engineering; 234525; 6647Graphene with groundbreaking properties has tremendous impact on physical sciences as 2-D atomic layer carbon sheet. Its unique electronic and photonic properties lead to applications such as transistors, graphene photodetectors (GPDs), and electronic circuit components. Metal-graphene-metal (MGM) GPDs with single-or multilayer graphene sheets are promising for future nanoscale optical communication architectures because of wide range absorption from far infrared to visible spectrum, fast carrier velocity, and advanced production techniques due to planar geometry. In this paper, signal-to-noise ratio (SNR), bit-error rate (BER), and data rate performances of nanoscale single-layer symmetric MGM photodetectors are analyzed for intensity modulation and direct detection (IM/DD) modulation. Shot and thermal noise limited (NL) performances are analyzed emphasizing graphene layer width dependence and domination of thermal NL characteristics for practical power levels. Tens of Gbit/s data rates are shown to be achievable with very low BERs for single-receiver (SR) GPDs. Furthermore, multireceiver (MR) GPDs and parallel line-scan (PLS) network topology are defined improving the efficiency of symmetric GPDs. SNR performance of SR PLS channels are both improved and homogenized with MR devices having the same total graphene area by optimizing their positions with maxmin solutions and using maximal ratio and equal gain diversity combining techniques.Publication Metadata only A communication theoretical modeling of single-walled carbon nanotube optical nanoreceivers and broadcast power allocation(Ieee-Inst Electrical Electronics Engineers Inc, 2012) N/A; Department of Electrical and Electronics Engineering; Gülbahar, Burhan; Akan, Özgür Barış; PhD Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; College of Engineering; 234525; 6647Carbon nanotube (CNT) with its ground-breaking properties is a promising candidate for future nanoscale communication networks. CNTs can be used as on-chip optical antenna for wireless interconnects. Carbon nanotube field-effect transistors (CNTFETs) show significant performance as photodetectors due to wide spectral region and tunable bandgap. In this paper, CNTFETs composed of semiconducting single-walled carbon nanotube (SWNT) and metal contacts (M-SWNT-M) are used as photodiode receivers in nanoscale optical communication by theoretically modeling diameter-dependent characteristics for shot-, dark-, and thermal-noise-limited cases. Bit error rate (BER), cutoff bit rate, and signal-to-noise ratio performance are analyzed for intensity modulation and direct detection modulation. The multireceiver CNT nanoscale network topology is presented for information broadcast and the minimum SNR is maximized solving NP-hard max-min power allocation problem with semidefinite programming relaxation and branch and bound framework. The significant performance improvement is observed compared with uniform power allocation. Derived model is compared with existing experiments and hundreds of Mb/s data rate is achievable with very low BERs. Furthermore, optimization gain is highest for thermal-noise-limited case while the shot-noise-limited case gives the highest data rate.Publication Metadata only A comprehensive study on the characteristic spectroscopic features of nitrogen doped graphene(Elsevier, 2019) Ogasawara, Hirohito; N/A; N/A; N/A; Department of Chemistry; Solati, Navid; Mobassem, Sonia; Kahraman, Abdullah; Kaya, Sarp; PhD Student; PhD Student; PhD Student; Faculty Member; Department of Chemistry; Koç University Research Center for Translational Medicine (KUTTAM) / Koç Üniversitesi Translasyonel Tıp Araştırma Merkezi (KUTTAM); Graduate School of Sciences and Engineering; Graduate School of Sciences and Engineering; Graduate School of Sciences and Engineering; College of Sciences; N/A; N/A; N/A; 116541Despite significant methodical improvements in the synthesis of N-doped graphene, there are still unsolved questions regarding the control of content and the configuration of nitrogen species in graphene honeycomb network. A cross-examination of X-ray photoelectron spectroscopy and Raman spectroscopy findings indicates that the nitrogen dopant amount is graphene thicknesses dependent, but the various nitrogen dopant coordination can be obtained on both double- and few-layer graphene. Characteristic defect features (D') appearing in Raman spectra upon N-doping is sensitive to nitrogen dopant coordination, graphitic-pyridinic/nitrilic species and therefore the doping level can be identified. Pyridinic and nitrilic nitrogen as primary species turn graphene to p-type semiconductor after a mild thermal treatment.Publication Metadata only A computational study of axial dispersion in segmented gas-liquid flow(American Institute of Physics (AIP) Publishing, 2007) Gunther, Axel; Stone, Howard A.; Department of Mechanical Engineering; Muradoğlu, Metin; Faculty Member; Department of Mechanical Engineering; College of Engineering; 46561Axial dispersion of a tracer in a two-dimensional gas-liquid flow is studied computationally using a finite-volume/front-tracking method. The effects of Peclet number, capillary number, and segment size are examined. At low Peclet numbers, the axial dispersion is mainly controlled by the convection through the liquid films between the bubbles and channel walls. In this regime, the computational results are found to be in a very good agreement with the existing model due to Pedersen and Horvath [Ind. Eng. Chem. Fundam. 20, 181 (1981)]. At high Peclet numbers, the axial dispersion is mainly controlled by the molecular diffusion, with some convective enhancement. In this regime, a new model is proposed and found to agree well with the computational results. These Peclet number regimes are shown to persist for different slug lengths. The axial dispersion is found to depend weakly on the capillary number in the diffusion-controlled regime. Finally, computational simulations are performed for the cases of six bubbles to mimic bubble trains, and results are compared with the theoretical models.Publication Metadata only A deep etching mechanism for trench-bridging silicon nanowires(Iop Publishing Ltd, 2016) Wollschlaeger, Nicole; Österle, Werner; Leblebici, Yusuf; N/A; Department of Mechanical Engineering; Taşdemir, Zuhal; Alaca, Burhanettin Erdem; PhD Student; Faculty Member; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); Graduate School of Sciences and Engineering; College of Engineering; N/A; 115108Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a topdown, silicon-on-insulator technology. The technology provides a pathway for obtaining wellcontrolled silicon nanowires along with the surrounding microscale features up to a three-orderof-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 mu m. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.Publication Metadata only A deformation-based approach to tuning of magnetic micromechanical resonators(2018) Yalçınkaya, Arda D.; Department of Mechanical Engineering; N/A; Department of Mechanical Engineering; Biçer, Mahmut; Esfahani, Mohammad Nasr; Alaca, Burhanettin Erdem; Researcher; PhD Student; Faculty Member; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); College of Engineering; Graduate School of Sciences and Engineering; College of Engineering; N/A; N/A; 115108Resonance frequency tuning in magnetic micromechanical resonators remains a primary field of study for frequency reference applications. The use of magnetic micromechanical resonators for innovative timing, oscillator and sensing applications necessitates a platform for the precise control of the resonance frequency. The present work addresses a deformation based technique for tuning the resonance frequency of nickel micromechanical resonators. Frequency response is measured through magnetic actuation and optical readout. The tuning approach is based on a combination of flexural deformation and uniaxial strain. The bending deformation is achieved by using a DC current through the microbeam. This magnetomotive mechanism reduces the resonance frequency by about 13% for a maximum DC current of 80 mA. A substrate bending method is used for applying uniaxial strain to increase the resonance frequency by about 8%. A bidirectional frequency modulation is thus demonstrated by utilizing both deformation techniques. The interpretation of results is carried out by finite element analysis and electromechanical analogy in an equivalent circuit. Using deformation techniques, this study provides a rigorous approach to control the resonance frequency of magnetic micromechanical resonators.