Publication:
Object placement for high bandwidth memory augmented with high capacity memory

dc.contributor.coauthorN/A
dc.contributor.departmentN/A
dc.contributor.departmentDepartment of Computer Engineering
dc.contributor.kuauthorLaghari, Mohammad
dc.contributor.kuauthorErten, Didem Unat
dc.contributor.kuprofileMaster Student
dc.contributor.kuprofileFaculty Member
dc.contributor.otherDepartment of Computer Engineering
dc.contributor.schoolcollegeinstituteGraduate School of Sciences and Engineering
dc.contributor.schoolcollegeinstituteCollege of Engineering
dc.contributor.yokidN/A
dc.contributor.yokid219274
dc.date.accessioned2024-11-10T00:11:55Z
dc.date.issued2017
dc.description.abstractHigh bandwidth memory (HBM) is a new emerging technology that aims to improve the performance of bandwidth limited applications. Even though it provides high bandwidth, it must be augmented with DRAM to meet the memory capacity requirement of any applications. Due to this limitation, objects in an application should be optimally placed on the heterogeneous memory subsystems. In this study, we propose an object placement algorithm that places program objects to fast or slow memories in case the capacity of fast memory is insufficient to hold all the objects to increase the overall application performance. Our algorithm uses the reference counts and type of references (read or write) to make an initial placement of data. In addition, we perform various memory bandwidth benchmarks to be used in our placement algorithm on Intel Knights Landing (KNL) architecture. Not surprisingly high bandwidth memory sustains higher read bandwidth than write bandwidth, however, placing write-intensive data on HBM results in better overall performance because write-intensive data is punished by the DRAM speed more severely compared to read intensive data. Moreover, our benchmarks demonstrate that if a basic block makes references to both types of memories, it performs worse than if it makes references to only one type of memory in some cases. We test our proposed placement algorithm with 6 applications under various system configurations. By allocating objects according to our placement scheme, we are able to achieve a speedup of up to 2x.
dc.description.indexedbyWoS
dc.description.indexedbyScopus
dc.description.openaccessNO
dc.description.sponsoredbyTubitakEuTÜBİTAK
dc.description.sponsorshipTUBITAK [215E185, 116C066] Dr. Unat is supported by TUBITAK with project number 116C066. Authors from Koc University are supported by TUBITAK Grant No: 215E185. Authors would like to thank Dr. Pietro Cicotti from San Diego Supercomputer Center for his input in project.
dc.identifier.doi10.1109/SBAC-PAD.2017.24
dc.identifier.isbn978-1-5090-1233-6
dc.identifier.issn1550-6533
dc.identifier.scopus2-s2.0-85041180497
dc.identifier.urihttp://dx.doi.org/10.1109/SBAC-PAD.2017.24
dc.identifier.urihttps://hdl.handle.net/20.500.14288/17566
dc.identifier.wos426895600017
dc.keywordsHigh bandwidth memory
dc.keywordsObject placement
dc.keywordsMcdram
dc.keywordsDram
dc.keywordsKnl phase-change memory
dc.languageEnglish
dc.publisherIEEE
dc.sourceIEEE 29th International Symposium on Computer Architecture and High Performance Computing (SBAC-PAD)
dc.subjectComputer science
dc.subjectHardware and architecture
dc.subjectEngineering
dc.subjectElectrical and electronic engineering
dc.titleObject placement for high bandwidth memory augmented with high capacity memory
dc.typeConference proceeding
dspace.entity.typePublication
local.contributor.authoridN/A
local.contributor.authorid0000-0002-2351-0770
local.contributor.kuauthorLaghari, Mohammad
local.contributor.kuauthorErten, Didem Unat
relation.isOrgUnitOfPublication89352e43-bf09-4ef4-82f6-6f9d0174ebae
relation.isOrgUnitOfPublication.latestForDiscovery89352e43-bf09-4ef4-82f6-6f9d0174ebae

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