Publication:
Monolithic fabrication of silicon nanowires bridging thick silicon structures

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dc.contributor.coauthorPeric, O.
dc.contributor.coauthorSacchetto, D.
dc.contributor.coauthorFantner, G.E.
dc.contributor.coauthorLeblebici, Y.
dc.contributor.departmentDepartment of Mechanical Engineering
dc.contributor.kuauthorTaşdemir, Zuhal
dc.contributor.kuauthorAlaca, Burhanettin Erdem
dc.contributor.kuprofileFaculty Member
dc.contributor.otherDepartment of Mechanical Engineering
dc.contributor.schoolcollegeinstituteCollege of Engineering
dc.contributor.yokidN/A
dc.contributor.yokid115108
dc.date.accessioned2024-11-09T12:02:49Z
dc.date.issued2015
dc.description.abstractA monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 μm is demonstrated with a future prospect for 50 μm opening up new possibilities for the deterministic integration of nanowires with microsystems. Nanowires with in-plane dimensions as low as 20 nm and aspect ratios up to 150 are obtained. Nanomechanical characterization through bending tests further confirms structural integrity of the connection between nanowires and anchoring Si microstructures.
dc.description.fulltextYES
dc.description.indexedbyWoS
dc.description.indexedbyScopus
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuTÜBİTAK
dc.description.sponsoredbyTubitakEuEU
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TÜBİTAK))
dc.description.sponsorshipKoç University-Istanbul Rotary Club Fundamental Research Seed Fund Program
dc.description.sponsorshipSwiss Government Excellence Scholarship
dc.description.sponsorshipEuropean Union (EU)
dc.description.sponsorshipSwiss National Science Foundation
dc.description.versionPublisher version
dc.description.volume1
dc.formatpdf
dc.identifier.doi10.1109/XNANO.2015.2469312
dc.identifier.embargoNO
dc.identifier.filenameinventorynoIR00895
dc.identifier.issn2332-7715
dc.identifier.linkhttps://doi.org/10.1109/XNANO.2015.2469312
dc.identifier.quartileN/A
dc.identifier.scopus2-s2.0-85056645670
dc.identifier.urihttps://hdl.handle.net/20.500.14288/995
dc.identifier.wos449979300031
dc.keywordsAtomic force microscopy (AFM)
dc.keywordsBending test
dc.keywordsSilicon nanowires
dc.keywordsSingle crystal reactive etching and metallization (SCREAM)
dc.keywordsSilicon
dc.keywordsPassivation
dc.keywordsMicrostructures
dc.keywordsNanowires
dc.keywordsFabrication
dc.keywordsMicromechanical devices
dc.keywordsNanostructures
dc.keywordsAspect ratio
dc.keywordsAtomic force microscopy
dc.keywordsBending tests
dc.keywordsNanowires
dc.keywordsSilicon
dc.keywordsSingle crystals
dc.keywordsSubstrates
dc.keywordsDeterministic integration
dc.keywordsFuture prospects
dc.keywordsMonolithic fabrications
dc.keywordsNanomechanical characterization
dc.keywordsReactive etching
dc.keywordsSidewall passivation
dc.keywordsSilicon nanowires
dc.keywordsSilicon structures
dc.keywordsSilicon wafers
dc.languageEnglish
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.grantno112E058
dc.relation.grantno307338-NaMic
dc.relation.grantno205320_152675
dc.relation.urihttp://cdm21054.contentdm.oclc.org/cdm/ref/collection/IR/id/895
dc.sourceIEEE Nanotechnology Express
dc.subjectMultidisciplinary engineering
dc.subjectMathematics
dc.titleMonolithic fabrication of silicon nanowires bridging thick silicon structures
dc.typeJournal Article
dspace.entity.typePublication
local.contributor.authoridN/A
local.contributor.authorid0000-0001-5931-8134
local.contributor.kuauthorTaşdemir, Zuhal
local.contributor.kuauthorAlaca, Burhanettin Erdem
relation.isOrgUnitOfPublicationba2836f3-206d-4724-918c-f598f0086a36
relation.isOrgUnitOfPublication.latestForDiscoveryba2836f3-206d-4724-918c-f598f0086a36

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