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Monolithic fabrication of silicon nanowires bridging thick silicon structures

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dc.contributor.coauthorPeric, Oliver
dc.contributor.coauthorSacchetto, Davide
dc.contributor.coauthorFantner, Georg Ernest
dc.contributor.coauthorLeblebici, Yusuf
dc.contributor.departmentDepartment of Mechanical Engineering
dc.contributor.departmentGraduate School of Sciences and Engineering
dc.contributor.departmentKUYTAM (Koç University Surface Science and Technology Center)
dc.contributor.kuauthorAlaca, Burhanettin Erdem
dc.contributor.kuauthorTaşdemir, Zuhal
dc.contributor.schoolcollegeinstituteCollege of Engineering
dc.contributor.schoolcollegeinstituteGRADUATE SCHOOL OF SCIENCES AND ENGINEERING
dc.contributor.schoolcollegeinstituteResearch Center
dc.date.accessioned2024-11-09T22:48:53Z
dc.date.issued2018
dc.description.abstractA monolithic process is developed for the fabrication of Si nanowires within thick Si substrates. A combination of anisotropic etch and sidewall passivation is utilized to protect and release Si lines during the subsequent deep etch. An etch depth of 10 mu m is demonstrated with a future prospect for 50 mu m opening up new possibilities for the deterministic integration of nanowires with microsystems. Nanowires with in-plane dimensions as low as 20 nm and aspect ratios up to 150 are obtained. Nanomechanical characterization through bending tests further confirms structural integrity of the connection between nanowires and anchoring Si microstructures.
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.issue6
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuN/A
dc.description.sponsorshipTUBITAK[112E058]
dc.description.sponsorshipKoc University-İstanbul Rotary Club Fundamental Research Seed Fund Program
dc.description.sponsorshipSwiss Government Excellence Scholarship
dc.description.sponsorshipEuropean Union [307338-NaMic]
dc.description.sponsorshipSwiss National Science Foundation [205320_152675] This work was supported in part by TUBITAKunder Grant 112E058 and in part by the Koc University-İstanbul Rotary Club Fundamental Research Seed Fund Program. The work of Z. Tasdemir was supported by Swiss Government Excellence Scholarship. The work of G. Fantner was supported in part by the European Union FP7/2007-2013/ERC under Grant 307338-NaMic and in part by the Swiss National Science Foundation under Grant 205320_152675.
dc.description.volume17
dc.identifier.doi10.1109/TNANO.2018.2868712
dc.identifier.eissn1941-0085
dc.identifier.issn1536-125X
dc.identifier.quartileQ2
dc.identifier.scopus2-s2.0-85056645670
dc.identifier.urihttps://doi.org/10.1109/TNANO.2018.2868712
dc.identifier.urihttps://hdl.handle.net/20.500.14288/6415
dc.identifier.wos449979300031
dc.keywordsAtomic force microscopy (AFM)
dc.keywordsBending test
dc.keywordsSilicon nanowires (NWs)
dc.keywordsSingle crystal reactive etching and metallization (SCREAM)
dc.language.isoeng
dc.publisherIEEE-Inst Electrical Electronics Engineers Inc
dc.relation.ispartofIEEE Transactions on Nanotechnology
dc.subjectElectrical electronics engineering
dc.subjectNanoscience
dc.subjectNanotechnology
dc.subjectPhysics
dc.subjectMaterials science
dc.titleMonolithic fabrication of silicon nanowires bridging thick silicon structures
dc.typeJournal Article
dspace.entity.typePublication
local.contributor.kuauthorTaşdemir, Zuhal
local.contributor.kuauthorAlaca, Burhanettin Erdem
local.publication.orgunit1GRADUATE SCHOOL OF SCIENCES AND ENGINEERING
local.publication.orgunit1College of Engineering
local.publication.orgunit1Research Center
local.publication.orgunit2Department of Mechanical Engineering
local.publication.orgunit2KUYTAM (Koç University Surface Science and Technology Center)
local.publication.orgunit2Graduate School of Sciences and Engineering
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