Publication: Temperature dependence of the threshold electric field in a hot electron VCSEL
Files
Program
KU-Authors
KU Authors
Co-Authors
Balkan, N.
Erol, A.
Arıkan, M. C.
Roberts, J.
Editor & Affiliation
Compiler & Affiliation
Translator
Other Contributor
Date
Language
Embargo Status
NO
Journal Title
Journal ISSN
Volume Title
Alternative Title
Abstract
The operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure - Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the IN characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.
Source
Publisher
Society of Photo-optical Instrumentation Engineers (SPIE)
Subject
Physics
Citation
Has Part
Source
Proceedings of SPIE
Book Series Title
Edition
DOI
10.1117/12.591107