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Temperature dependence of the threshold electric field in a hot electron VCSEL

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dc.contributor.coauthorBalkan, N.
dc.contributor.coauthorErol, A.
dc.contributor.coauthorArıkan, M. C.
dc.contributor.coauthorRoberts, J.
dc.contributor.departmentDepartment of Physics
dc.contributor.kuauthorSerpengüzel, Ali
dc.contributor.schoolcollegeinstituteCollege of Sciences
dc.date.accessioned2024-11-09T12:11:24Z
dc.date.issued2005
dc.description.abstractThe operation of the Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure - Vertical Cavity Surface Emitting Laser (HELLISH-VCSEL) devices is based on hot carrier transport parallel to the layers of Ga1-xAlxAs p-n junction. It is therefore a field - effect device and the light emission from the device is independent of the polarity of the applied voltage. In this study, we present the temperature dependence of the operational characteristics of the device. Experimental studies comprising of the measurements of the IN characteristics, electroluminescence, reflectivity, and temperature dependent light-applied electric field (L-F) characteristics are conducted to find the optimum operating temperature of the device.
dc.description.fulltextYES
dc.description.indexedbyWOS
dc.description.indexedbyScopus
dc.description.openaccessYES
dc.description.publisherscopeInternational
dc.description.sponsoredbyTubitakEuTÜBİTAK
dc.description.sponsorshipScientific and Technical Research Council of Turkey (Scientific and Technological Research Council of Turkey (TÜBİTAK))
dc.description.sponsorshipBritish Council
dc.description.versionPublisher version
dc.identifier.doi10.1117/12.591107
dc.identifier.eissn1996-756X
dc.identifier.embargoNO
dc.identifier.filenameinventorynoIR00872
dc.identifier.isbn0-8194-5699-3
dc.identifier.issn0277-786X
dc.identifier.quartileN/A
dc.identifier.scopus2-s2.0-21844469463
dc.identifier.urihttps://hdl.handle.net/20.500.14288/1054
dc.identifier.wos229338500021
dc.keywordsHot Electron Laser
dc.keywordsVCSEL
dc.keywordsHELLISH-VCSEL
dc.language.isoeng
dc.publisherSociety of Photo-optical Instrumentation Engineers (SPIE)
dc.relation.ispartofProceedings of SPIE
dc.relation.urihttp://cdm21054.contentdm.oclc.org/cdm/ref/collection/IR/id/876
dc.subjectPhysics
dc.titleTemperature dependence of the threshold electric field in a hot electron VCSEL
dc.typeConference Proceeding
dspace.entity.typePublication
local.contributor.kuauthorSerpengüzel, Ali
local.publication.orgunit1College of Sciences
local.publication.orgunit2Department of Physics
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