Publication: Near-infrared resonant cavity enhanced silicon microsphere photodetector
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Murib, Mohammed Sharif
Yüce, Emre
Gürlü, Oğuzhan
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NO
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Abstract
Elastic scattering intensity calculations at 90° and 0° for the transverse electric and transverse magnetic polarized light were performed at 1200nm for a 50 μm radius and 3.5 refractive index silicon microsphere. The mode spacing between morphology dependent resonances was found to be 1.76 nm. The linewidth of the morphology dependent resonances was observed to be 0.02 nm, which leads to a quality factor on the order of 104.
Source
Publisher
Society of Photo-optical Instrumentation Engineers (SPIE)
Subject
Physics
Citation
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Source
Proceedings of SPIE - The International Society for Optical Engineering
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Edition
DOI
10.1117/12.821198