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Permanent URI for this collectionhttps://hdl.handle.net/20.500.14288/3

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    Modeling and characterization of comb-actuated resonant microscanners
    (Iop Publishing Ltd, 2006) N/A; Department of Electrical and Electronics Engineering; Ataman, Çağlar; Ürey, Hakan; PhD Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; College of Engineering; N/A; 8579
    The dynamics of the out-of-plane comb-drive actuator used in a torsional resonant mode microscanner is discussed. The microscanner is fabricated using the standard SOI technology by Fraunhofer, IPMS and utilized in various display, barcode scanning, spectroscopy and other imaging applications. The device is a parametrically excited system and exhibits hysteretic frequency response, nonlinear transient response, subharmonic oscillations, multiple parametric resonances, and alternating-oscillation-frequency behavior. Analytical and numerical models are developed to predict the parametric system dynamics. The analytical model is based on the solution of the linear Mathieu equation and valid for small angular displacements. The numerical model is valid for both small and large deflection angles. The analytical and numerical models are validated with the experimental results under various ambient pressures and excitation schemes and successfully predict the dynamics of the parametric nature of the microscanner. As many as four parametric resonances are observed at 30 mTorr. The models developed in this paper can be used to optimize the structure and the actuator.
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    A novel orthogonal frequency division multiplexing with index modulation waveform with carrier frequency offset resistance and low peak-to-average power ratio
    (Wiley, 2022) Kucukyavuz, Defne; Onat, Furuzan Atay; N/A; Department of Electrical and Electronics Engineering; Gürol, İlter Erol; Başar, Ertuğrul; PhD Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; College of Engineering; N/A; 149116
    In this paper, we propose a novel orthogonal frequency division multiplexing (OFDM) scheme with high carrier frequency offset (CFO) resistance and low peak-to-average power ratio (PAPR). In this scheme, we consider a hybrid model with two subblock types, namely, pilot subblocks and standard subblocks. In pilot subblocks, active subcarriers are utilized for PAPR reduction while inactive carriers generated by the index modulation (IM) are utilized for the coarse CFO estimation. For standard subblocks, we consider unique subcarrier activation patterns (SAPs) with high-diversity IM to enhance the bit error performance of the overall system. Additionally, the inactive data tones in standard subblocks are utilized for fine CFO estimation, which enhances the CFO estimation quite significantly. Furthermore, in this paper, we show that proposed hybrid OFDM-IM (H-OFDM-IM) scheme can outperform conventional OFDM-IM and classical OFDM both in CFO estimation and PAPR reduction without requiring transmission of any side information. Finally, we show both mathematically and through computer simulations that proposed H-OFDM-IM can achieve a satisfactory bit error rate (BER) performance under high CFO scenarios.
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    Throughput maximization in electromagnetic energy harvesting cognitive radio sensor networks
    (Wiley, 2016) Alagoz, Fatih; N/A; Department of Electrical and Electronics Engineering; Ergül, Özgür; Akan, Özgür Barış; PhD Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; College of Engineering; 156793; 6647
    In the near future, billions of wireless devices are expected to be operational. To enable the required machine to machine communications, two major problems must be addressed. How to obtain the required spectrum efficiency, and how to deliver the required power to these devices. The most promising answers to these questions are cognitive radio and energy harvesting, respectively. Energy harvesting enables deployment of sensors and devices without having to worry about their battery lifetime. Cognitive radio increases the utilization of spectrum by accessing unused spectrum dynamically. Energy harvesting from electromagnetic waves is suitable for these low power, low cost devices used in machine to machine communications because only minimal additional hardware is required for such energy harvesting. With this idea as the starting point, we first present an analysis on how much throughput can be obtained from a cognitive, electromagnetic energy harvesting wireless network. Then, we show when and how cooperation among network nodes may increase performance. We believe that our results will provide insight for the development of future cooperative cognitive energy harvesting networks. Copyright (c) 2015 John Wiley & Sons, Ltd.
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    A deformation-based approach to tuning of magnetic micromechanical resonators
    (2018) Yalçınkaya, Arda D.; Department of Mechanical Engineering; N/A; Department of Mechanical Engineering; Biçer, Mahmut; Esfahani, Mohammad Nasr; Alaca, Burhanettin Erdem; Researcher; PhD Student; Faculty Member; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); College of Engineering; Graduate School of Sciences and Engineering; College of Engineering; N/A; N/A; 115108
    Resonance frequency tuning in magnetic micromechanical resonators remains a primary field of study for frequency reference applications. The use of magnetic micromechanical resonators for innovative timing, oscillator and sensing applications necessitates a platform for the precise control of the resonance frequency. The present work addresses a deformation based technique for tuning the resonance frequency of nickel micromechanical resonators. Frequency response is measured through magnetic actuation and optical readout. The tuning approach is based on a combination of flexural deformation and uniaxial strain. The bending deformation is achieved by using a DC current through the microbeam. This magnetomotive mechanism reduces the resonance frequency by about 13% for a maximum DC current of 80 mA. A substrate bending method is used for applying uniaxial strain to increase the resonance frequency by about 8%. A bidirectional frequency modulation is thus demonstrated by utilizing both deformation techniques. The interpretation of results is carried out by finite element analysis and electromechanical analogy in an equivalent circuit. Using deformation techniques, this study provides a rigorous approach to control the resonance frequency of magnetic micromechanical resonators.
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    A Fourier transform spectrometer using resonant vertical comb actuators
    (Institute of Physics (IOP) Publishing, 2006) Wolter, Alexander; N/A; Department of Electrical and Electronics Engineering; Ataman, Çağlar; Ürey, Hakan; PhD Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; College of Engineering; N/A; 8579
    The design, fabrication and characterization of a novel out-of-plane vertical comb-drive actuator based lamellar grating interferometer (LGI) is reported. The interferometer utilizes resonant mode vertical comb actuators, where comb fingers are simultaneously used for actuation and as a movable diffraction grating, making the device very compact. The Fourier transform of the zeroth order intensity pattern as a function of the optical path difference gives the spectrum of light. The main advantages offered by the proposed device are a long travel range (i.e. good spectral resolution), a large clear aperture (i.e. high light efficiency), and a very simple, robust and compact spectrometer structure. Peak-to-peak 106 mu m out-of-plane deflection is observed in ambient pressure and at 28 V, corresponding to a theoretical spectral resolution of about 0.4 nm in the visible band and 3.6 nm at 1.5 mu m. A simple CMOS compatible process based on bulk micromachining of a silicon-on-insulator wafer is used for the device fabrication.
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    Two-wavelength grating interferometry for MEMS sensors
    (IEEE-inst Electrical Electronics Engineers inc, 2007) N/A; N/A; Department of Electrical and Electronics Engineering; Ferhanoğlu, Onur; Toy, Muhammed Fatih; Ürey, Hakan; PhD Student; Master Student; Faculty Member; Department of Electrical and Electronics Engineering; Graduate School of Sciences and Engineering; Graduate School of Sciences and Engineering; College of Engineering; 205198; N/A; 8579
    Diffraction gratings integrated with micro-electro-mechanical-systems (MEMS) offer shot noise limited subnanometer displacement detection sensitivities but are limited in detection range for mechanical transducers. a two-wavelength readout method is developed that maintains high sensitivity while increasing the detection range, which is demonstrated using a MEMS spectrometer with integrated diffraction grating. the two-laser illumination extended the detection range from 105 nm to 1.7 mu m assuming the readout sensitivity is maintained at >50% of the maximum sensitivity.
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    Monolithic technology for silicon nanowires in high-topography architectures
    (Elsevier, 2017) Wollschlager, Nicole; Rangelow, Ivo W.; Leblebici, Yusuf; Department of Mechanical Engineering; Esfahani, Mohammad Nasr; Yılmaz, Mustafa Akın; Alaca, Burhanettin Erdem; PhD Student; PhD Student; Faculty Member; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); Graduate School of Sciences and Engineering; Graduate School of Sciences and Engineering; College of Engineering; N/A; N/A; 115108
    Integration of silicon nanowires (Si NWs) in three-dimensional (3D) devices including integrated circuits (ICs) and microelectromechanical systems (MEMS) leads to enhanced functionality and performance in diverse applications. The immediate challenge to the extensive use of Si NWs in modern electronic devices is their integration with the higher-order architecture. Topography-related limits of integrating Si NWs in the third dimension are addressed in this work. Utilizing a well-tuned combination of etching and protection processes, Si NWs are batch-produced in bulk Si with an extreme trench depth of 40 gm, the highest trench depth obtained in a monolithic fashion within the same Si crystal so far. The implications of the technique for the thick silicon-on-insulator (S01) technology are investigated. The process is transferred to SOI wafers yielding Si NWs with a critical dimension of 100 nm along with a trench aspect ratio of 50. Electrical measurements verify the prospect of utilizing such suspended Si NWs spanning deep trenches as versatile active components in ICs and MEMS. Introducing a new monolithic approach to obtaining Si NWs and the surrounding higher-order architecture within the same SOI wafer, this work opens up new possibilities for modem sensors and power efficient ICs. (C) 2017 Elsevier B.V. All rights reserved.
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    PHR: a parallel hierarchical radiosity system with dynamic load balancing
    (Springer, 2005) Sinop, A.K.; Abacı, T.; Akkuş, U.; Gudukbay, U.; Department of Computer Engineering; Gürsoy, Attila; Faculty Member; Department of Computer Engineering; College of Engineering; 8745
    In this paper, we present a parallel system called PHR for computing hierarchical radiosity solutions of complex scones. The system is targeted for multi-processor architectures with distributed memory. The system evaluates and subdivides the interactions level by level in a breadth first fashion, and the interactions are redistributed at the end of each level to keep load balanced. In order to allow interactions freely travel across processors, all the patch data is replicated on all the processors. Hence, the system favors load balancing at the expense of increased communication volume. However, the results show that the overhead of communication is negligible compared with total execution time. We obtained a speed-up of 25 for 32 processors in our test scenes.
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    Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI
    (Iop Publishing Ltd, 2018) Karakan, M. Çağatay; Orhan, Ezgi; Hanay, M. Selim; Leblebici, Yusuf; N/A; N/A; Department of Mechanical Engineering; Esfahani, Mohammad Nasr; Kılınç, Yasin; Alaca, Burhanettin Erdem; PhD Student; PhD Student; Faculty Member; Department of Mechanical Engineering; Koç University Surface Science and Technology Center (KUYTAM) / Koç Üniversitesi Yüzey Teknolojileri Araştırmaları Merkezi (KUYTAM); Graduate School of Sciences and Engineering; College of Engineering; College of Engineering; N/A; N/A; 115108
    The use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 mu m-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.
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    Microsphere-based channel dropping filter with an integrated photodetector
    (IEEE-Inst Electrical Electronics Engineers Inc, 2004) İşçi, Şenol; Department of Physics; Department of Physics; Department of Physics; Bilici, Temel; Kurt, Adnan; Serpengüzel, Ali; Teaching Faculty; Teaching Faculty; Faculty Member; Department of Physics; College of Sciences; College of Sciences; College of Sciences; N/A; 194455; 27855
    Morphology-dependent resonances of dielectric microspheres are used for polarization-insensitive optical channel dropping from an optical fiber half coupler to a silicon photodetector in the M-band. The dropped channels are observed both in the elastic scattering and the transmission spectra. The highest quality factor morphology-dependent resonances have repetitive channel separations of 0.14 nm and linewidths of 0.06 nm. The filter drops approximately 10% (0.5 dB) of the power at the resonance wavelength. The power detected by the photodiode is estimated to be 3.5% of the power in the fiber.